Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

Publication year: 2011 Source: Synthetic Metals, Available online 15 September 2011 Y.Y. Tan, L.W. Tan, K.D.G.I. Jayawardena, J.V. Anguita, J.D. Carey, … We have investigated the room temperature long channel field effect characteristics of a single graphene layer transistor incorporating a poly-4-vinyl-phenol (PVP) organic insulating layer, as an alternative to conventional oxide gate dielectric materials. High purity copper foils were used in the chemical vapour growth of the graphene layer and visible Raman analysis confirmed the presence of a high quality mono-layer carbon film

Publication year: 2011 Source: Synthetic Metals, Available online 15 September 2011 Y.Y. Tan, L.W. Tan, K.D.G.I. Jayawardena, J.V. Anguita, J.D. Carey, … We have investigated the room temperature long channel field effect characteristics of a single graphene layer transistor incorporating a poly-4-vinyl-phenol (PVP) organic insulating layer, as an alternative to conventional oxide gate dielectric materials. High purity copper foils were used in the chemical vapour growth of the graphene layer and visible Raman analysis confirmed the presence of a high quality mono-layer carbon film

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Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

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